IRLML2803PBF mosfet equivalent, power mosfet.
G1 S2
HEXFET® Power MOSFET
VDSS = 30V
3D
RDS(on) = 0.25Ω
A customized leadframe has been incorporated into the stand.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power M.
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